All MOSFET. IPB051NE8NG Datasheet

 

IPB051NE8NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB051NE8NG

Marking Code: 051NE8N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 135 nC

Rise Time (tr): 42 nS

Drain-Source Capacitance (Cd): 1710 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0051 Ohm

Package: TO263

IPB051NE8NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB051NE8NG Datasheet (PDF)

4.1. ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Size:503K _infineon

IPB051NE8NG
IPB051NE8NG

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R 5.1 mΩ DS(on),max (TO 263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target

9.1. ipb050n06ng ipp050n06ng.pdf Size:731K _infineon

IPB051NE8NG
IPB051NE8NG

IPP050N06N G IPB050N06N G ™ Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 1 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package ‐ O ‐ ‐ O ‐ Mar

9.2. ipb052n04n.pdf Size:441K _infineon

IPB051NE8NG
IPB051NE8NG

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 9.3. ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf Size:683K _infineon

IPB051NE8NG
IPB051NE8NG

 pe IPB049N06L3 G IPP052N06L3 G ™ 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:

9.4. ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf Size:691K _infineon

IPB051NE8NG
IPB051NE8NG

 pe IPB054N06N3 G IPP057N06N3 G ™ 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?

 9.5. ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Size:526K _infineon

IPB051NE8NG
IPB051NE8NG

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V 80 V DS • N-channel, normal level R 5.4 mΩ DS(on),max (SMD) • Excellent gate charge x R product (FOM) DS(on) I 80 A D • Very low on-resistance R DS(on) previous engineering • 175 °C operating temperature sample codes: IPP06CN08N • Pb-free lead plating; RoHS complia

9.6. ipb057n06n.pdf Size:570K _infineon

IPB051NE8NG
IPB051NE8NG

Type IPB057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V • Optimized for synchronous rectification RDS(on),max 5.7 mW • 100% avalanche tested ID 45 A • Superior thermal resistance Qoss 32 nC • N-channel, normal level Qg(0V..10V) 27 nC • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Haloge

9.7. ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf Size:781K _infineon

IPB051NE8NG
IPB051NE8NG

IPB05CN10N G IPI05CN10N G IPP05CN10N G ™ 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7

9.8. ipb05n03la.pdf Size:341K _infineon

IPB051NE8NG
IPB051NE8NG

IPB05N03LA G OptiMOS®2 Power-Transistor Product Summary Features V 25 V DS • Ideal for high-frequency dc/dc converters R (SMD version) 4.6 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 80 A D • N-channel - Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) PG-TO263 • Superior thermal resistan

9.9. ipb055n03l.pdf Size:727K _infineon

IPB051NE8NG
IPB051NE8NG

Type IPP055N03L G IPB055N03L G ™ 3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 5.5 mW DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) •

9.10. ipb05n03lbg.pdf Size:280K _infineon

IPB051NE8NG
IPB051NE8NG

IPB05N03LB OptiMOS®2 Power-Transistor Product Summary Features V 30 V DS • Ideal for high-frequency dc/dc converters R 5.0 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 80 A D • N-channel - Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) PG-TO220-3-1 PG-TO263-3 • Superior thermal resistan

9.11. ipb054n08n3g.pdf Size:258K _inchange_semiconductor

IPB051NE8NG
IPB051NE8NG

Isc N-Channel MOSFET Transistor IPB054N08N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

9.12. ipb054n06n3.pdf Size:258K _inchange_semiconductor

IPB051NE8NG
IPB051NE8NG

Isc N-Channel MOSFET Transistor IPB054N06N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

9.13. ipb05cn10n.pdf Size:257K _inchange_semiconductor

IPB051NE8NG
IPB051NE8NG

Isc N-Channel MOSFET Transistor IPB05CN10N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

9.14. ipb057n06n.pdf Size:252K _inchange_semiconductor

IPB051NE8NG
IPB051NE8NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB057N06N ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIM

Datasheet: IPB039N10N3G , IPB041N04NG , IPB042N03LG , IPB042N10N3G , IPB048N06LG , IPB049N06L3G , IPB049NE7N3G , IPB050N06NG , IRFZ44V , IPB052N04NG , IPB054N06N3G , IPB054N08N3G , IPB055N03LG , IPB05CN10NG , IPB065N03LG , IPB065N06LG , IPB065N15N3G .

 

 
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