IPB065N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPB065N03LG Datasheet (PDF)

4.1. Size:614K infineon
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4.2. Size:242K inchange semiconductor
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isc N-Channel MOSFET Transistor IPB065N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

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IPB065N06L G IPP065N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G P ( 381>>581>35=5>C

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