IPB065N03LG Specs and Replacement

Type Designator: IPB065N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO263

IPB065N03LG substitution

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IPB065N03LG datasheet

 4.1. Size:614K  infineon
 ipb065n03l.pdf pdf_icon

IPB065N03LG

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 4.2. Size:242K  inchange semiconductor
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IPB065N03LG

isc N-Channel MOSFET Transistor IPB065N03L DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY... See More ⇒

 6.1. Size:738K  infineon
 ipb065n06lg ipp065n06lg.pdf pdf_icon

IPB065N03LG

IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C ... See More ⇒

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Detailed specifications: IPB049NE7N3G, IPB050N06NG, IPB051NE8NG, IPB052N04NG, IPB054N06N3G, IPB054N08N3G, IPB055N03LG, IPB05CN10NG, IRFP260, IPB065N06LG, IPB065N15N3G, IPB067N08N3G, IPB06CN10NG, IPB072N15N3G, IPB075N04LG, IPB080N03LG, IPB080N06NG

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