APT6015LVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6015LVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO264

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APT6015LVR datasheet

 ..1. Size:62K  apt
 apt6015lvr.pdf pdf_icon

APT6015LVR

APT6015LVR 600V 38A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. D Faster Switching 100% Avalanche Tested Lowe

 5.1. Size:59K  apt
 apt6015lvfr.pdf pdf_icon

APT6015LVR

APT6015LVFR 600V 38A 0.150W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

 5.2. Size:113K  apt
 apt6015b2vfrg apt6015lvfrg.pdf pdf_icon

APT6015LVR

APT6015B2VFR APT6015LVFR 600V 38A 0.150 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 5.3. Size:255K  inchange semiconductor
 apt6015lvfr.pdf pdf_icon

APT6015LVR

isc N-Channel MOSFET Transistor APT6015LVFR FEATURES Drain Current I = 38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

MOSTRAR MÁS

Otros transistores... APT50M50PVR, APT50M60JN, APT50M85JVFR, APT50M85JVR, APT6013JVR, APT6015B2VR, APT6015JN, APT6015JVR, 2N60, APT6017WVR, APT6020LVR, APT6025BVR, APT6027HVR, APT6030BN, APT6030BVR, APT6032AVR, APT6035AVR