IPB083N10N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB083N10N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 523 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0083 Ohm

Encapsulados: TO263

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IPB083N10N3G datasheet

 ..1. Size:778K  infineon
 ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf pdf_icon

IPB083N10N3G

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 3.1. Size:757K  infineon
 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf pdf_icon

IPB083N10N3G

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 3.2. Size:258K  inchange semiconductor
 ipb083n10n3.pdf pdf_icon

IPB083N10N3G

Isc N-Channel MOSFET Transistor IPB083N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 6.1. Size:908K  infineon
 ipb083n15n5lf.pdf pdf_icon

IPB083N10N3G

IPB083N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain

MOSTRAR MÁS

Otros transistores... IPB065N15N3G, IPB067N08N3G, IPB06CN10NG, IPB072N15N3G, IPB075N04LG, IPB080N03LG, IPB080N06NG, IPB081N06L3G, IRFB3607, IPB08CNE8NG, IPB090N06N3G, IPB093N04LG, IPB096N03LG, IPB097N08N3G, IPB100N04S4-H2, IPB107N20N3G, IPB108N15N3G