IPB083N10N3G. Аналоги и основные параметры
Наименование производителя: IPB083N10N3G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 523 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0083 Ohm
Тип корпуса: TO263
Аналог (замена) для IPB083N10N3G
- подборⓘ MOSFET транзистора по параметрам
IPB083N10N3G даташит
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipb083n10n3.pdf
Isc N-Channel MOSFET Transistor IPB083N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
ipb083n15n5lf.pdf
IPB083N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain
Другие IGBT... IPB065N15N3G, IPB067N08N3G, IPB06CN10NG, IPB072N15N3G, IPB075N04LG, IPB080N03LG, IPB080N06NG, IPB081N06L3G, IRFB3607, IPB08CNE8NG, IPB090N06N3G, IPB093N04LG, IPB096N03LG, IPB097N08N3G, IPB100N04S4-H2, IPB107N20N3G, IPB108N15N3G
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
Popular searches
2sc5242 | irf540 equivalent | mp1620 transistor equivalent | 2sc945 transistor | c2073 transistor | ac176 transistor | mpsa20 | irfp264



