APT6027HVR Todos los transistores

 

APT6027HVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6027HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 525 pF

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO258

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APT6027HVR Datasheet (PDF)

1.1. apt6027hvr.pdf Size:61K _apt

APT6027HVR
APT6027HVR

APT6027HVR 600V 20A 0.270Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

4.1. apt6025bfllg apt6025sfllg.pdf Size:162K _update_mosfet

APT6027HVR
APT6027HVR

APT6025BFLL APT6025SFLL Ω 600V 24A 0.250Ω Ω Ω Ω BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

4.2. apt6021bllg.pdf Size:163K _update_mosfet

APT6027HVR
APT6027HVR

APT6021BLL APT6021SLL Ω 600V 29A 0.210Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

 4.3. apt6029bfllg apt6029sfllg.pdf Size:160K _update_mosfet

APT6027HVR
APT6027HVR

APT6029BFLL APT6029SFLL Ω 600V 21A 0.290Ω Ω Ω Ω BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

4.4. apt6029sll apt6029sllg.pdf Size:160K _update_mosfet

APT6027HVR
APT6027HVR

APT6029BLL APT6029SLL Ω 600V 21A 0.290Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

 4.5. apt6025bllg.pdf Size:160K _update_mosfet

APT6027HVR
APT6027HVR

APT6025BLL APT6025SLL Ω 600V 24A 0.250Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

4.6. apt6021bfllg apt6021sfllg.pdf Size:164K _update_mosfet

APT6027HVR
APT6027HVR

APT6021BFLL APT6021SFLL Ω 600V 29A 0.210Ω Ω Ω Ω R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

4.7. apt6025bvfrg apt6025svfrg.pdf Size:116K _update_mosfet

APT6027HVR
APT6027HVR

APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

4.8. apt6025bvrg.pdf Size:49K _update_mosfet

APT6027HVR
APT6027HVR

APT6025BVR 600V 25A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.9. apt6029bll.pdf Size:69K _apt

APT6027HVR
APT6027HVR

APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.10. apt6025bfll.pdf Size:71K _apt

APT6027HVR
APT6027HVR

APT6025BFLL APT6025SFLL 600V 24A 0.250W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.11. apt6020lvr.pdf Size:64K _apt

APT6027HVR
APT6027HVR

APT6020LVR 600V 30A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Lower

4.12. apt6021bfll.pdf Size:71K _apt

APT6027HVR
APT6027HVR

APT6021BFLL APT6021SFLL 600V 29A 0.210W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.13. apt6021bll.pdf Size:69K _apt

APT6027HVR
APT6027HVR

APT6021BLL APT6021SLL 600V 29A 0.210W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.14. apt6025bll.pdf Size:69K _apt

APT6027HVR
APT6027HVR

APT6025BLL APT6025SLL 600V 24A 0.250W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.15. apt6025svfr.pdf Size:113K _apt

APT6027HVR
APT6027HVR

APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

4.16. apt6029bfll.pdf Size:71K _apt

APT6027HVR
APT6027HVR

APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.17. apt6025bvr.pdf Size:62K _apt

APT6027HVR
APT6027HVR

APT6025BVR 600V 25A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.18. apt6025bvfr.pdf Size:72K _apt

APT6027HVR
APT6027HVR

APT6025BVFR 600V 25A 0.250Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

4.19. apt6025svr.pdf Size:59K _apt

APT6027HVR
APT6027HVR

APT6025SVR 600V 25A 0.250W POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower Le

Otros transistores... APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , TPC8107 , APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR .

 

 
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