APT6027HVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6027HVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12
nS
Cossⓘ - Capacitancia
de salida: 525
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27
Ohm
Paquete / Cubierta:
TO258
Búsqueda de reemplazo de APT6027HVR MOSFET
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Selección ⓘ de transistores por parámetros
Principales características: APT6027HVR
..1. Size:61K apt
apt6027hvr.pdf 
APT6027HVR 600V 20A 0.270 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
8.1. Size:160K apt
apt6029bfllg apt6029sfllg.pdf
APT6029BFLL APT6029SFLL 600V 21A 0.290 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
8.2. Size:162K apt
apt6025bfllg apt6025sfllg.pdf
APT6025BFLL APT6025SFLL 600V 24A 0.250 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
8.3. Size:69K apt
apt6025bll.pdf
APT6025BLL APT6025SLL 600V 24A 0.250W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
8.4. Size:116K apt
apt6025bvfrg apt6025svfrg.pdf
APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re
8.5. Size:160K apt
apt6025bllg.pdf
APT6025BLL APT6025SLL 600V 24A 0.250 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
8.6. Size:49K apt
apt6025bvrg.pdf
APT6025BVR 600V 25A 0.250 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
8.7. Size:113K apt
apt6025svfr.pdf
APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re
8.8. Size:72K apt
apt6025bvfr.pdf
APT6025BVFR 600V 25A 0.250 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
8.9. Size:163K apt
apt6021bllg.pdf
APT6021BLL APT6021SLL 600V 29A 0.210 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
8.10. Size:71K apt
apt6029bfll.pdf
APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas
8.11. Size:164K apt
apt6021bfllg apt6021sfllg.pdf
APT6021BFLL APT6021SFLL 600V 29A 0.210 R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
8.12. Size:69K apt
apt6021bll.pdf
APT6021BLL APT6021SLL 600V 29A 0.210W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
8.13. Size:160K apt
apt6029sll apt6029sllg.pdf
APT6029BLL APT6029SLL 600V 21A 0.290 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
8.14. Size:62K apt
apt6025bvr.pdf
APT6025BVR 600V 25A 0.250 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
8.15. Size:69K apt
apt6029bll.pdf
APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
8.16. Size:71K apt
apt6021bfll.pdf
APT6021BFLL APT6021SFLL 600V 29A 0.210W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas
8.17. Size:71K apt
apt6025bfll.pdf
APT6025BFLL APT6025SFLL 600V 24A 0.250W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas
8.18. Size:64K apt
apt6020lvr.pdf
APT6020LVR 600V 30A 0.200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lower
8.19. Size:59K apt
apt6025svr.pdf
APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower Le
8.20. Size:376K inchange semiconductor
apt6025bll.pdf
isc N-Channel MOSFET Transistor APT6025BLL FEATURES Drain Current I =24A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.21. Size:375K inchange semiconductor
apt6025bvfr.pdf
isc N-Channel MOSFET Transistor APT6025BVFR FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.22. Size:376K inchange semiconductor
apt6029bfll.pdf
isc N-Channel MOSFET Transistor APT6029BFLL FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.23. Size:376K inchange semiconductor
apt6021bll.pdf
isc N-Channel MOSFET Transistor APT6021BLL FEATURES Drain Current I =29A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.21 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.24. Size:375K inchange semiconductor
apt6025bvr.pdf
isc N-Channel MOSFET Transistor APT6025BVR FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.25. Size:376K inchange semiconductor
apt6029bll.pdf
isc N-Channel MOSFET Transistor APT6029BLL FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.26. Size:376K inchange semiconductor
apt6021bfll.pdf
isc N-Channel MOSFET Transistor APT6021BFLL FEATURES Drain Current I =29A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.21 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.27. Size:376K inchange semiconductor
apt6025bfll.pdf
isc N-Channel MOSFET Transistor APT6025BFLL FEATURES Drain Current I =24A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
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