All MOSFET. APT6027HVR Datasheet

 

APT6027HVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT6027HVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 525 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO258

APT6027HVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT6027HVR Datasheet (PDF)

1.1. apt6027hvr.pdf Size:61K _apt

APT6027HVR
APT6027HVR

APT6027HVR 600V 20A 0.270Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

4.1. apt6029bll.pdf Size:69K _apt

APT6027HVR
APT6027HVR

APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.2. apt6025bfll.pdf Size:71K _apt

APT6027HVR
APT6027HVR

APT6025BFLL APT6025SFLL 600V 24A 0.250W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.3. apt6020lvr.pdf Size:64K _apt

APT6027HVR
APT6027HVR

APT6020LVR 600V 30A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Lower

4.4. apt6021bfll.pdf Size:71K _apt

APT6027HVR
APT6027HVR

APT6021BFLL APT6021SFLL 600V 29A 0.210W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.5. apt6021bll.pdf Size:69K _apt

APT6027HVR
APT6027HVR

APT6021BLL APT6021SLL 600V 29A 0.210W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.6. apt6025bll.pdf Size:69K _apt

APT6027HVR
APT6027HVR

APT6025BLL APT6025SLL 600V 24A 0.250W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.7. apt6025svfr.pdf Size:113K _apt

APT6027HVR
APT6027HVR

APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

4.8. apt6029bfll.pdf Size:71K _apt

APT6027HVR
APT6027HVR

APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.9. apt6025bvr.pdf Size:62K _apt

APT6027HVR
APT6027HVR

APT6025BVR 600V 25A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.10. apt6025bvfr.pdf Size:72K _apt

APT6027HVR
APT6027HVR

APT6025BVFR 600V 25A 0.250Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

4.11. apt6025svr.pdf Size:59K _apt

APT6027HVR
APT6027HVR

APT6025SVR 600V 25A 0.250W POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower Le

Datasheet: APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , TPC8107 , APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR .

 


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