APT6027HVR MOSFET. Datasheet pdf. Equivalent

   Type Designator: APT6027HVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO258

APT6027HVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

APT6027HVR Datasheet (PDF)

..1. Size:61K apt
apt6027hvr.pdf pdf_icon

APT6027HVR600V 20A 0.270POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

8.1. Size:160K apt
apt6029bfllg apt6029sfllg.pdf pdf_icon

APT6029BFLLAPT6029SFLL600V 21A 0.290BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

8.2. Size:162K apt
apt6025bfllg apt6025sfllg.pdf pdf_icon

APT6025BFLLAPT6025SFLL600V 24A 0.250BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

8.3. Size:69K apt
apt6025bll.pdf pdf_icon

APT6025BLLAPT6025SLL600V 24A 0.250WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

8.4. Size:116K apt
apt6025bvfrg apt6025svfrg.pdf pdf_icon

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re

8.5. Size:160K apt
apt6025bllg.pdf pdf_icon

APT6025BLLAPT6025SLL600V 24A 0.250RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

8.6. Size:49K apt
apt6025bvrg.pdf pdf_icon

APT6025BVR600V 25A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

8.7. Size:113K apt
apt6025svfr.pdf pdf_icon

8.8. Size:72K apt
apt6025bvfr.pdf pdf_icon

APT6025BVFR600V 25A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

8.9. Size:163K apt
apt6021bllg.pdf pdf_icon

APT6021BLLAPT6021SLL600V 29A 0.210RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

8.10. Size:71K apt
apt6029bfll.pdf pdf_icon

APT6029BFLLAPT6029SFLL600V 21A 0.290WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

8.11. Size:164K apt
apt6021bfllg apt6021sfllg.pdf pdf_icon

APT6021BFLLAPT6021SFLL600V 29A 0.210RBFLL POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

8.12. Size:69K apt
apt6021bll.pdf pdf_icon

APT6021BLLAPT6021SLL600V 29A 0.210WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

8.13. Size:160K apt
apt6029sll apt6029sllg.pdf pdf_icon

APT6029BLLAPT6029SLL600V 21A 0.290RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

8.14. Size:62K apt
apt6025bvr.pdf pdf_icon

8.15. Size:69K apt
apt6029bll.pdf pdf_icon

APT6029BLLAPT6029SLL600V 21A 0.290WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

8.16. Size:71K apt
apt6021bfll.pdf pdf_icon

APT6021BFLLAPT6021SFLL600V 29A 0.210WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

8.17. Size:71K apt
apt6025bfll.pdf pdf_icon

APT6025BFLLAPT6025SFLL600V 24A 0.250WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

8.18. Size:64K apt
apt6020lvr.pdf pdf_icon

APT6020LVR600V 30A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lower

8.19. Size:59K apt
apt6025svr.pdf pdf_icon

APT6025SVR600V 25A 0.250WPOWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower Le

8.20. Size:376K inchange semiconductor
apt6025bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6025BLLFEATURESDrain Current I =24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.21. Size:375K inchange semiconductor
apt6025bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6025BVFRFEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

8.22. Size:376K inchange semiconductor
apt6029bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6029BFLLFEATURESDrain Current I =21A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

8.23. Size:376K inchange semiconductor
apt6021bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6021BLLFEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.21(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.24. Size:375K inchange semiconductor
apt6025bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6025BVRFEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.25. Size:376K inchange semiconductor
apt6029bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6029BLLFEATURESDrain Current I =21A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.26. Size:376K inchange semiconductor
apt6021bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6021BFLLFEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.21(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

8.27. Size:376K inchange semiconductor
apt6025bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6025BFLLFEATURESDrain Current I =24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , AON7403 , APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR .

LIST

Last Update

All MOSFET. APT6027HVR Datasheet

APT6027HVR MOSFET. Datasheet pdf. Equivalent

APT6027HVR Datasheet (PDF)

LIST

Last Update

AllTransistors(C)