IPB50CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D S ) 5:3@@7> @AD?3> >7H7> 4 m . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( D n)DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE

IPB50N10S3L-16IPI50N10S3L-16, IPP50N10S3L-16OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 15.4mDS(on),max I 50 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval

IPB50R199CPCIMOSTM #:A0

IPB50N12S3L-15IPI50N12S3L-15, IPP50N12S3L-15OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper

IPB50R299CPCIMOSTM #:A0

IPB50R140CPCIMOSTM #:A0

IPB50R250CPCIMOSTM #:A0

Isc N-Channel MOSFET Transistor IPB50R199CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Isc N-Channel MOSFET Transistor IPB50R140CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Isc N-Channel MOSFET Transistor IPB50R250CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)