All MOSFET. IPB50CN10NG Datasheet

 

IPB50CN10NG Datasheet and Replacement


   Type Designator: IPB50CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO263
 

 IPB50CN10NG substitution

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IPB50CN10NG Datasheet (PDF)

 ..1. Size:902K  infineon
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IPB50CN10NG

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 9.1. Size:186K  infineon
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IPB50CN10NG

IPB50N10S3L-16IPI50N10S3L-16, IPP50N10S3L-16OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 15.4mDS(on),max I 50 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval

 9.2. Size:554K  infineon
ipb50r199cp.pdf pdf_icon

IPB50CN10NG

IPB50R199CPCIMOSTM #:A0

 9.3. Size:404K  infineon
ipb50n12s3l-15 ipi50n12s3l-15 ipp50n12s3l-15.pdf pdf_icon

IPB50CN10NG

IPB50N12S3L-15IPI50N12S3L-15, IPP50N12S3L-15OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper

Datasheet: IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , NCEP15T14 , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G , IPB600N25N3G , IPB60R099C6 , IPB60R099CP .

History: AM4302N | UTT16P10 | IRF6631 | QM4014D | IRF3805LPBF | DMN6140L | LSE60R280HT

Keywords - IPB50CN10NG MOSFET datasheet

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