IPB65R660CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB65R660CFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 33 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.66 Ohm

Encapsulados: TO263

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IPB65R660CFD datasheet

 ..1. Size:4455K  infineon
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf pdf_icon

IPB65R660CFD

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi

 ..2. Size:258K  inchange semiconductor
ipb65r660cfd.pdf pdf_icon

IPB65R660CFD

Isc N-Channel MOSFET Transistor IPB65R660CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 0.1. Size:2296K  infineon
ipb65r660cfda ipp65r660cfda.pdf pdf_icon

IPB65R660CFD

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R660CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPB65R660CFDA, IPP65R660CFDA D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (

 7.1. Size:2158K  infineon
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IPB65R660CFD

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

Otros transistores... IPB60R520CP, IPB60R600C6, IPB60R600CP, IPB60R950C6, IPB65R280C6, IPB65R280E6, IPB65R380C6, IPB65R600C6, IRLZ44N, IPB70N04S4-06, IPB79CN10NG, IPB80N04S4-03, IPD100N04S4-02, IPD100N06S4-03, IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50