All MOSFET. IPB65R660CFD Datasheet

 

IPB65R660CFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB65R660CFD
   Marking Code: 65F6660
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
   Package: TO263

 IPB65R660CFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB65R660CFD Datasheet (PDF)

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 ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf

IPB65R660CFD IPB65R660CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R660CFDData SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R660CFD, IPB65R660CFD, IPP65R660CFDIPA65R660CFD, IPD65R660CFD, IPI65R660CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for hi

 ..2. Size:258K  inchange semiconductor
 ipb65r660cfd.pdf

IPB65R660CFD IPB65R660CFD

Isc N-Channel MOSFET Transistor IPB65R660CFDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 0.1. Size:2296K  infineon
 ipb65r660cfda ipp65r660cfda.pdf

IPB65R660CFD IPB65R660CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R660CFDA Data SheetRev. 2.1FinalAutomotive650V CoolMOS CFDA Power TransistorIPB65R660CFDA, IPP65R660CFDADPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (

 7.1. Size:2158K  infineon
 ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf

IPB65R660CFD IPB65R660CFD

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 7.2. Size:2092K  infineon
 ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf

IPB65R660CFD IPB65R660CFD

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 7.3. Size:258K  inchange semiconductor
 ipb65r600c6.pdf

IPB65R660CFD IPB65R660CFD

Isc N-Channel MOSFET Transistor IPB65R600C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ZXMN6A09DN8 | 2SK1017-01

 

 
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