IPB70N04S4-06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB70N04S4-06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 58 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm

Encapsulados: TO263

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IPB70N04S4-06 datasheet

 ..1. Size:164K  infineon
ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf pdf_icon

IPB70N04S4-06

IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 5.1. Size:186K  infineon
ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf pdf_icon

IPB70N04S4-06

IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t

 8.1. Size:405K  infineon
ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf pdf_icon

IPB70N04S4-06

IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperatur

 8.2. Size:124K  infineon
ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPB70N04S4-06

IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP7

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