IPB70N04S4-06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB70N04S4-06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 58 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 490 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IPB70N04S4-06 MOSFET
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IPB70N04S4-06 datasheet
ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf
IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P
ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf
IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t
ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf
IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperatur
ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf
IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP7
Otros transistores... IPB60R600C6, IPB60R600CP, IPB60R950C6, IPB65R280C6, IPB65R280E6, IPB65R380C6, IPB65R600C6, IPB65R660CFD, IRFB4110, IPB79CN10NG, IPB80N04S4-03, IPD100N04S4-02, IPD100N06S4-03, IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40
History: IPD100N04S4-02
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