IPB70N04S4-06 Todos los transistores

 

IPB70N04S4-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB70N04S4-06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de IPB70N04S4-06 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPB70N04S4-06 Datasheet (PDF)

 ..1. Size:164K  infineon
 ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf pdf_icon

IPB70N04S4-06

IPB70N04S4-06IPI70N04S4-06, IPP70N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 5.1. Size:186K  infineon
 ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf pdf_icon

IPB70N04S4-06

IPB70N04S3-07IPI70N04S3-07, IPP70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 8.1. Size:405K  infineon
 ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf pdf_icon

IPB70N04S4-06

IPB70N12S3-11IPI70N12S3-11, IPP70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperatur

 8.2. Size:124K  infineon
 ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPB70N04S4-06

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

MOSTRAR MÁS

Otros transistores... IPB60R600C6 , IPB60R600CP , IPB60R950C6 , IPB65R280C6 , IPB65R280E6 , IPB65R380C6 , IPB65R600C6 , IPB65R660CFD , IRF640N , IPB79CN10NG , IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , IPD14N06S2-80 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 .

History: FS2301 | APT8024JFLL | STD4NK100Z | DMP2070UCB6 | 2SJ450 | NTD65N03R-035 | JCS7N70R

 

 
Back to Top

 


 
.