Справочник MOSFET. IPB70N04S4-06

 

IPB70N04S4-06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPB70N04S4-06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 58 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 490 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

IPB70N04S4-06 Datasheet (PDF)

 ..1. Size:164K  infineon
ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdfpdf_icon

IPB70N04S4-06

IPB70N04S4-06IPI70N04S4-06, IPP70N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

 5.1. Size:186K  infineon
ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdfpdf_icon

IPB70N04S4-06

IPB70N04S3-07IPI70N04S3-07, IPP70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 8.1. Size:405K  infineon
ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdfpdf_icon

IPB70N04S4-06

IPB70N12S3-11IPI70N12S3-11, IPP70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperatur

 8.2. Size:124K  infineon
ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdfpdf_icon

IPB70N04S4-06

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

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History: AM5521C | BUK9M6R7-40H | CS3N90A3H1-G | 2SK2561-01R | BSS127 | IRLBA3803P | NTMFS4847N

 

 
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