IPD30N06S2-23 Todos los transistores

 

IPD30N06S2-23 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD30N06S2-23
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 283 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO252
 

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IPD30N06S2-23 Datasheet (PDF)

 ..1. Size:149K  infineon
 ipd30n06s2-23.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N06S2

 3.1. Size:149K  infineon
 ipd30n06s2-15.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2-15OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.7mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N06

 4.1. Size:148K  infineon
 ipd30n06s2l-13.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 13mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

 4.2. Size:148K  infineon
 ipd30n06s2l-23.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2L-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

MOSTRAR MÁS

Otros transistores... IPD25N06S4L-30 , IPD26N06S2L-35 , IPD30N03S2L-07 , IPD30N03S2L-10 , IPD30N03S2L-20 , IPD30N03S4L-09 , IPD30N03S4L-14 , IPD30N06S2-15 , 8205A , IPD30N06S2L-13 , IPD30N06S2L-23 , IPD30N06S4L-23 , IPD30N08S2-22 , IPD30N08S2L-21 , IPD30N10S3L-34 , IPD35N10S3L-26 , IPD40N03S4L-08 .

History: SFF50N30M | NCE65TF099 | FQI17P06TU | FQI27N25TU | NCE65TF068T | IRF3709ZCS | GSM4804

 

 
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