All MOSFET. IPD30N06S2-23 Datasheet

 

IPD30N06S2-23 Datasheet and Replacement


   Type Designator: IPD30N06S2-23
   Marking Code: 2N0623
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 283 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO252
 

 IPD30N06S2-23 substitution

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IPD30N06S2-23 Datasheet (PDF)

 ..1. Size:149K  infineon
 ipd30n06s2-23.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N06S2

 3.1. Size:149K  infineon
 ipd30n06s2-15.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2-15OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.7mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N06

 4.1. Size:148K  infineon
 ipd30n06s2l-13.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 13mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

 4.2. Size:148K  infineon
 ipd30n06s2l-23.pdf pdf_icon

IPD30N06S2-23

IPD30N06S2L-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

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Datasheet: IPD25N06S4L-30 , IPD26N06S2L-35 , IPD30N03S2L-07 , IPD30N03S2L-10 , IPD30N03S2L-20 , IPD30N03S4L-09 , IPD30N03S4L-14 , IPD30N06S2-15 , IRFP260 , IPD30N06S2L-13 , IPD30N06S2L-23 , IPD30N06S4L-23 , IPD30N08S2-22 , IPD30N08S2L-21 , IPD30N10S3L-34 , IPD35N10S3L-26 , IPD40N03S4L-08 .

History: AFN7106S

Keywords - IPD30N06S2-23 MOSFET datasheet

 IPD30N06S2-23 cross reference
 IPD30N06S2-23 equivalent finder
 IPD30N06S2-23 lookup
 IPD30N06S2-23 substitution
 IPD30N06S2-23 replacement

 

 
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