IPD70N10S3L-12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD70N10S3L-12 Datasheet (PDF)

..1. Size:176K infineon
ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf pdf_icon

IPD70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.5mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3L-12 PG-TO252-3-11 QN10L12

4.1. Size:175K infineon
ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf pdf_icon

IPD70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.1mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3-12 PG-TO252-3-11 QN1012Max

7.1. Size:394K infineon
ipd70n12s3l-12.pdf pdf_icon

IPD70N12S3L-12OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedT

7.2. Size:361K infineon
ipd70n12s3-11.pdf pdf_icon

IPD70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTy

Otros transistores... IPD50N06S4-09 , IPD50N06S4L-08 , IPD50N06S4L-12 , IPD50N10S3L-16 , IPD50P03P4L-11 , IPD70N03S4L-04 , IPD70N04S3-07 , IPD70N10S3-12 , IRFB3607 , IPD80N04S3-06 , IPD80P03P4L-07 , IPD90N03S4L-02 , IPD90N03S4L-03 , IPD90N04S3-04 , IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 .