APT6037HVR Todos los transistores

 

APT6037HVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6037HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 140 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 403 pF

Resistencia drenaje-fuente RDS(on): 0.37 Ohm

Empaquetado / Estuche: TO258

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APT6037HVR Datasheet (PDF)

1.1. apt6037hvr.pdf Size:61K _apt

APT6037HVR
APT6037HVR

APT6037HVR 600V 15.5A 0.370Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

4.1. apt6035bvfrg apt6035svfrg.pdf Size:117K _update_mosfet

APT6037HVR
APT6037HVR

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

4.2. apt6038bfllg apt6038sfllg.pdf Size:162K _update_mosfet

APT6037HVR
APT6037HVR

APT6038BFLL APT6038SFLL Ω 600V 17A 0.380Ω Ω Ω Ω R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL a

 4.3. apt6033bn.pdf Size:47K _update_mosfet

APT6037HVR
APT6037HVR

D TO-247 G APT6030BN 600V 23.0A 0.30Ω S APT6033BN 600V 22.0A 0.33Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V

4.4. apt6038bllg apt6038sllg.pdf Size:161K _update_mosfet

APT6037HVR
APT6037HVR

APT6038BLL APT6038SLL Ω 600V 17A 0.380Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

 4.5. apt6038bfll.pdf Size:71K _apt

APT6037HVR
APT6037HVR

APT6038BFLL APT6038SFLL 600V 17A 0.380W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.6. apt6030bvr.pdf Size:61K _apt

APT6037HVR
APT6037HVR

APT6030BVR 600V 21A 0.300Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.7. apt6035svr.pdf Size:65K _apt

APT6037HVR
APT6037HVR

APT6035SVR 600V 18A 0.350Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.8. apt6030.pdf Size:62K _apt

APT6037HVR
APT6037HVR

APT6030BVFR 600V 21A 0.300W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested

4.9. apt6032avr.pdf Size:61K _apt

APT6037HVR
APT6037HVR

APT6032AVR 600V 17.5A 0.320Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.10. apt6035bvfr.pdf Size:116K _apt

APT6037HVR
APT6037HVR

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

4.11. apt6038bll.pdf Size:69K _apt

APT6037HVR
APT6037HVR

APT6038BLL APT6038SLL 600V 17A 0.380W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

4.12. apt6035bn.pdf Size:49K _apt

APT6037HVR
APT6037HVR

D TO-247 G APT6035BN 600V 19.0A 0.35Ω S POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage ±30 Volts Total Power Dissi

4.13. apt6035avr.pdf Size:62K _apt

APT6037HVR
APT6037HVR

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

4.14. apt6030bvfr.pdf Size:62K _apt

APT6037HVR
APT6037HVR

APT6030BVFR 600V 21A 0.300W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested

4.15. apt6030bn.pdf Size:51K _apt

APT6037HVR
APT6037HVR

D TO-247 G APT6030BN 600V 23.0A 0.30Ω S APT6033BN 600V 22.0A 0.33Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V

4.16. apt6035bvr.pdf Size:62K _apt

APT6037HVR
APT6037HVR

APT6035BVR 600V 18A 0.350Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.17. apt6035.pdf Size:62K _apt

APT6037HVR
APT6037HVR

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

4.18. apt6030svr.pdf Size:112K _apt

APT6037HVR
APT6037HVR

APT6030BVR APT6030SVR Ω 600V 21A 0.300Ω Ω Ω Ω BVR POWER MOS V® MOSFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVR •

4.19. apt6030svfr.pdf Size:136K _apt

APT6037HVR
APT6037HVR

APT6030BVFR APT6030SVFR Ω 600V 21A 0.300Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

Otros transistores... APT6027HVR , APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT50M38JLL , APT6040BN , APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR .

 

 
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MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
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