APT6037HVR PDF and Equivalents Search

APT6037HVR 600V 15.5A 0.370 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe... See More ⇒

APT6030BVR 600V 21A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

D TO-247 G APT6035BN 600V 19.0A 0.35 S POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage 30 Volts Total Power Dissi... See More ⇒

APT6035BVR 600V 18A 0.350 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

APT6035AVR 600V 16A 0.350 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L... See More ⇒

D TO-247 G APT6030BN 600V 23.0A 0.30 S APT6033BN 600V 22.0A 0.33 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V... See More ⇒

APT6030BVFR APT6030SVFR 600V 21A 0.300 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

APT6032AVR 600V 17.5A 0.320 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒

APT6030BVFR 600V 21A 0.300W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested... See More ⇒

APT6038BFLL APT6038SFLL 600V 17A 0.380W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas... See More ⇒

APT6030BVR APT6030SVR 600V 21A 0.300 BVR POWER MOS V MOSFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVR ... See More ⇒

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

APT6038BLL APT6038SLL 600V 17A 0.380W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching ... See More ⇒

APT6038BFLL APT6038SFLL 600V 17A 0.380 R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL a... See More ⇒

APT6038BLL APT6038SLL 600V 17A 0.380 R BLL POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along... See More ⇒

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

APT6035SVR 600V 18A 0.350 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒

D TO-247 G APT6030BN 600V 23.0A 0.30 S APT6033BN 600V 22.0A 0.33 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V... See More ⇒

APT6030BVFR 600V 21A 0.300W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested... See More ⇒

APT6035AVR 600V 16A 0.350 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L... See More ⇒

isc N-Channel MOSFET Transistor APT6030BVR FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

isc N-Channel MOSFET Transistor APT6035BVR FEATURES Drain Current I =18A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.35 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

isc N-Channel MOSFET Transistor APT6030BVFR FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

isc N-Channel MOSFET Transistor APT6038BFLL FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

isc N-Channel MOSFET Transistor APT6038BLL FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒