IPD90N04S4L-04 Todos los transistores

 

IPD90N04S4L-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD90N04S4L-04
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO252
 

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IPD90N04S4L-04 Datasheet (PDF)

 ..1. Size:154K  infineon
 ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf pdf_icon

IPD90N04S4L-04

IPD90N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4L-04 PG-TO252-3-313 4N04L04Maximum ratin

 4.1. Size:152K  infineon
 ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf pdf_icon

IPD90N04S4L-04

IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,

 4.2. Size:154K  infineon
 ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf pdf_icon

IPD90N04S4L-04

IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,

 4.3. Size:152K  infineon
 ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf pdf_icon

IPD90N04S4L-04

IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,

MOSTRAR MÁS

Otros transistores... IPD70N10S3L-12 , IPD80N04S3-06 , IPD80P03P4L-07 , IPD90N03S4L-02 , IPD90N03S4L-03 , IPD90N04S3-04 , IPD90N04S3-H4 , IPD90N04S4-04 , STP80NF70 , IPD90N06S4-04 , IPD90N06S4-05 , IPD90N06S4-07 , IPD90N06S4L-03 , IPD90N06S4L-05 , IPD90N06S4L-06 , IPD90P03P4-04 , IPD90P03P4L-04 .

History: ME50N10 | FDS6675B | CES2303 | H7P1006MD90TZ | NTHL080N120SC1 | FDS4435-NL | ZXMP3F35N8

 

 
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