IPD90N06S4-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD90N06S4-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 1960 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: TO252

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IPD90N06S4-04 datasheet

 ..1. Size:163K  infineon
 ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90N06S4-04

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a

 2.1. Size:163K  infineon
 ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf pdf_icon

IPD90N06S4-04

IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.9 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11

 2.2. Size:163K  infineon
 ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf pdf_icon

IPD90N06S4-04

IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 5.1 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11

 4.1. Size:163K  infineon
 ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90N06S4-04

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P

MOSTRAR MÁS

Otros transistores... IPD80N04S3-06, IPD80P03P4L-07, IPD90N03S4L-02, IPD90N03S4L-03, IPD90N04S3-04, IPD90N04S3-H4, IPD90N04S4-04, IPD90N04S4L-04, 5N60, IPD90N06S4-05, IPD90N06S4-07, IPD90N06S4L-03, IPD90N06S4L-05, IPD90N06S4L-06, IPD90P03P4-04, IPD90P03P4L-04, IPD031N03LG