IPD90N06S4-04 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD90N06S4-04
Маркировка: 4N0604
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 99 nC
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1960 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD90N06S4-04
IPD90N06S4-04 Datasheet (PDF)
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf
IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf
IPD90N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.9mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-07 PG-TO252-3-11
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf
IPD90N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 5.1mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-05 PG-TO252-3-11
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf
IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf
IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf
IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918