IPD90N06S4L-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD90N06S4L-06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 980 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de IPD90N06S4L-06 MOSFET
IPD90N06S4L-06 Datasheet (PDF)
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf

IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf

IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf

IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf

IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
Otros transistores... IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 , IPD90N06S4-04 , IPD90N06S4-05 , IPD90N06S4-07 , IPD90N06S4L-03 , IPD90N06S4L-05 , 2N60 , IPD90P03P4-04 , IPD90P03P4L-04 , IPD031N03LG , IPD031N06L3G , IPD034N06N3G , IPD035N06L3G , IPD036N04LG , IPD038N04NG .
History: 18N65 | CHM3252PAGP | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | SSM3K329R
History: 18N65 | CHM3252PAGP | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | SSM3K329R



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