IPD90N06S4L-06 Datasheet. Specs and Replacement

Type Designator: IPD90N06S4L-06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO252

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IPD90N06S4L-06 datasheet

 ..1. Size:163K  infineon
 ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf pdf_icon

IPD90N06S4L-06

IPD90N06S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.3 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-06 P... See More ⇒

 1.1. Size:163K  infineon
 ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90N06S4L-06

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P... See More ⇒

 1.2. Size:163K  infineon
 ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf pdf_icon

IPD90N06S4L-06

IPD90N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 4.6 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-1... See More ⇒

 4.1. Size:163K  infineon
 ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90N06S4L-06

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a... See More ⇒

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Detailed specifications: IPD90N04S3-H4, IPD90N04S4-04, IPD90N04S4L-04, IPD90N06S4-04, IPD90N06S4-05, IPD90N06S4-07, IPD90N06S4L-03, IPD90N06S4L-05, IRF1405, IPD90P03P4-04, IPD90P03P4L-04, IPD031N03LG, IPD031N06L3G, IPD034N06N3G, IPD035N06L3G, IPD036N04LG, IPD038N04NG

Keywords - IPD90N06S4L-06 MOSFET specs

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