APT6040BN Todos los transistores

 

APT6040BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT6040BN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 87 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 436 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de APT6040BN MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT6040BN Datasheet (PDF)

 ..1. Size:50K  apt
 apt6040bn.pdf pdf_icon

APT6040BN

DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V

 6.1. Size:113K  apt
 apt6040bvfr.pdf pdf_icon

APT6040BN

APT6040BVFRAPT6040SVFR600V 16A 0.400BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR

 6.2. Size:57K  apt
 apt6040bvr.pdf pdf_icon

APT6040BN

APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast

 7.1. Size:58K  apt
 apt6040svr.pdf pdf_icon

APT6040BN

APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast

MOSTRAR MÁS

Otros transistores... APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR , AON7403 , APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR , APT8015JVR .

History: IXTH12N45MA | AUIRF2805 | CS830F

 

 
Back to Top

 


 
.