APT6040BN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6040BN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 436 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO247

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APT6040BN datasheet

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apt6040bn.pdf pdf_icon

APT6040BN

D TO-247 G APT6040BN 600V 18.0A 0.40 S APT6045BN 600V 17.0A 0.45 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V

 6.1. Size:113K  apt
apt6040bvfr.pdf pdf_icon

APT6040BN

APT6040BVFR APT6040SVFR 600V 16A 0.400 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR

 6.2. Size:57K  apt
apt6040bvr.pdf pdf_icon

APT6040BN

APT6040BVR APT6040SVR 600V 16A 0.400 BVR POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVR also achieves faster switching speeds through optimized gate layout. D Fast

 7.1. Size:58K  apt
apt6040svr.pdf pdf_icon

APT6040BN

APT6040BVR APT6040SVR 600V 16A 0.400 BVR POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVR also achieves faster switching speeds through optimized gate layout. D Fast

Otros transistores... APT6030BN, APT6030BVR, APT6032AVR, APT6035AVR, APT6035BN, APT6035BVR, APT6035SVR, APT6037HVR, IRF9640, APT6045BVR, APT6045CVR, APT6045SVR, APT60M75JVR, APT60M75PVR, APT60M90JN, APT8015JVFR, APT8015JVR