APT6040BN MOSFET PDF: N-Ch, 600V, 18A. Full specification with pinout and replacement list

APT6040BN PDF Specs and Replacement

   Type Designator: APT6040BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 436 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247

APT6040BN substitution

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APT6040BN PDF Specs

..1. Size:50K apt
apt6040bn.pdf pdf_icon

D TO-247 G APT6040BN 600V 18.0A 0.40 S APT6045BN 600V 17.0A 0.45 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V... See More ⇒

6.1. Size:113K apt
apt6040bvfr.pdf pdf_icon

APT6040BVFR APT6040SVFR 600V 16A 0.400 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

6.2. Size:57K apt
apt6040bvr.pdf pdf_icon

APT6040BVR APT6040SVR 600V 16A 0.400 BVR POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVR also achieves faster switching speeds through optimized gate layout. D Fast... See More ⇒

7.1. Size:58K apt
apt6040svr.pdf pdf_icon