All MOSFET. APT6040BN Datasheet

 

APT6040BN Datasheet and Replacement


   Type Designator: APT6040BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 87 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 436 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247
 
   - MOSFET ⓘ Cross-Reference Search

 

APT6040BN Datasheet (PDF)

 ..1. Size:50K  apt
apt6040bn.pdf pdf_icon

APT6040BN

DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V

 6.1. Size:113K  apt
apt6040bvfr.pdf pdf_icon

APT6040BN

APT6040BVFRAPT6040SVFR600V 16A 0.400BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR

 6.2. Size:57K  apt
apt6040bvr.pdf pdf_icon

APT6040BN

APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast

 7.1. Size:58K  apt
apt6040svr.pdf pdf_icon

APT6040BN

APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast

Datasheet: APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR , AON7403 , APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR , APT8015JVR .

Keywords - APT6040BN MOSFET datasheet

 APT6040BN cross reference
 APT6040BN equivalent finder
 APT6040BN lookup
 APT6040BN substitution
 APT6040BN replacement

 

 
Back to Top

 


 
.