IPD90P03P4-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD90P03P4-04

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 137 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 2340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO252

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IPD90P03P4-04 datasheet

 ..1. Size:165K  infineon
 ipd90p03p4-04 ds 10.pdf pdf_icon

IPD90P03P4-04

IPD90P03P4-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 4.5 m DS(on) I -90 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-11 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P03P4-04 PG-TO252-3-11 4P0304 Maxim

 4.1. Size:164K  infineon
 ipd90p03p4l-04 ipd90p03p4l-04 ds 10.pdf pdf_icon

IPD90P03P4-04

IPD90P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 4.1 m DS(on) I -90 A D Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-11 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mark

 7.1. Size:129K  infineon
 ipd90p04p4-05 ds 10.pdf pdf_icon

IPD90P03P4-04

IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 4.7 m DS(on) I -90 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P04P4-05 PG-TO252-3-313 4P0405 Maxi

 7.2. Size:415K  infineon
 ipd90p04p4-05.pdf pdf_icon

IPD90P03P4-04

IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 4.7 mW ID -90 A Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pin

MOSTRAR MÁS

Otros transistores... IPD90N04S4-04, IPD90N04S4L-04, IPD90N06S4-04, IPD90N06S4-05, IPD90N06S4-07, IPD90N06S4L-03, IPD90N06S4L-05, IPD90N06S4L-06, IRF520, IPD90P03P4L-04, IPD031N03LG, IPD031N06L3G, IPD034N06N3G, IPD035N06L3G, IPD036N04LG, IPD038N04NG, IPD038N06N3G