IPD053N08N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD053N08N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 80 V N-channel, normal levelRDS(on),max 5.3 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Very low on-resistance RDS(on) 175 C operating temperatureprevious engineering Pb-free lead plating; RoHS compliantsample code: IPD06CN08N Qualified according to JEDEC1

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isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3FEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80

TypeIPD053N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 5.3 mW Superior thermal resistanceID 45 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal

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isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06NFEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou