APT6045CVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6045CVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 305 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO254

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APT6045CVR datasheet

 ..1. Size:61K  apt
 apt6045cvr.pdf pdf_icon

APT6045CVR

APT6045CVR 600V 11.8A 0.450 POWER MOS V TO-254 TO-254 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested

 7.1. Size:63K  apt
 apt6045bvr.pdf pdf_icon

APT6045CVR

APT6045BVR 600V 15A 0.450 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.2. Size:56K  apt
 apt6045bn.pdf pdf_icon

APT6045CVR

D TO-247 G APT6040BN 600V 18.0A 0.40 S APT6045BN 600V 17.0A 0.45 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V

 7.3. Size:65K  apt
 apt6045svr.pdf pdf_icon

APT6045CVR

APT6045SVR 600V 15A 0.450 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

MOSTRAR MÁS

Otros transistores... APT6032AVR, APT6035AVR, APT6035BN, APT6035BVR, APT6035SVR, APT6037HVR, APT6040BN, APT6045BVR, AON7403, APT6045SVR, APT60M75JVR, APT60M75PVR, APT60M90JN, APT8015JVFR, APT8015JVR, APT8018JN, APT8028JVR