APT6045CVR PDF and Equivalents Search

 ..1. Size:61K  apt
 apt6045cvr.pdf

APT6045CVR 600V 11.8A 0.450 POWER MOS V TO-254 TO-254 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested ... See More ⇒

 7.1. Size:63K  apt
 apt6045bvr.pdf

APT6045BVR 600V 15A 0.450 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 7.2. Size:56K  apt
 apt6045bn.pdf

D TO-247 G APT6040BN 600V 18.0A 0.40 S APT6045BN 600V 17.0A 0.45 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25 C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V... See More ⇒

 7.3. Size:65K  apt
 apt6045svr.pdf

APT6045SVR 600V 15A 0.450 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒

 7.4. Size:132K  microsemi
 apt6045bvfrg apt6045svfrg.pdf

APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG 600V 15A 0.45 *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhance- D3PAK ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V also achieves ... See More ⇒

 7.5. Size:376K  inchange semiconductor
 apt6045bvr.pdf

isc N-Channel MOSFET Transistor APT6045BVR FEATURES Drain Current I =15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒