APT6045CVR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT6045CVR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 11.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 115
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 305
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
TO254
APT6045CVR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT6045CVR
Datasheet (PDF)
..1. Size:61K apt
apt6045cvr.pdf 
APT6045CVR600V 11.8A 0.450POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested
7.1. Size:63K apt
apt6045bvr.pdf
APT6045BVR600V 15A 0.450POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
7.2. Size:56K apt
apt6045bn.pdf
DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V
7.3. Size:65K apt
apt6045svr.pdf
APT6045SVR600V 15A 0.450POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
7.4. Size:132K microsemi
apt6045bvfrg apt6045svfrg.pdf
APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG 600V 15A 0.45 *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhance-D3PAKment mode power MOSFETs. This new technology minimizes the JFET ef-fect, increases packing density and reduces the on-resistance. Power MOS V also achieves
7.5. Size:376K inchange semiconductor
apt6045bvr.pdf
isc N-Channel MOSFET Transistor APT6045BVRFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: APT6032AVR
, APT6035AVR
, APT6035BN
, APT6035BVR
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, APT6037HVR
, APT6040BN
, APT6045BVR
, 5N50
, APT6045SVR
, APT60M75JVR
, APT60M75PVR
, APT60M90JN
, APT8015JVFR
, APT8015JVR
, APT8018JN
, APT8028JVR
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