IPD12CN10NG Todos los transistores

 ..1. Size:858K  infineon
 ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM) DS(on) ID 67 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 4.1. Size:623K  infineon
 ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

 7.1. Size:549K  infineon
 ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R (TO252) 12.4 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 67 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1

 9.1. Size:1000K  infineon
 ipd127n06lg.pdf

% # ! % (>.;?6?@ %>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 1 7 mW D n) m x P ( 381>>581>35=5>C

 9.2. Size:503K  infineon
 ipd122n10n3g.pdf

IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 12.2 mW Excellent gate charge x R product (FOM) DS(on) ID 59 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-fre

 9.3. Size:241K  inchange semiconductor
 ipd127n06l.pdf

isc N-Channel MOSFET Transistor IPD127N06L,IIPD127N06L FEATURES Static drain-source on-resistance RDS(on) 12.7m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V

 9.4. Size:242K  inchange semiconductor
 ipd122n10n3.pdf

isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 FEATURES Static drain-source on-resistance RDS(on) 12.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1