IPD50R520CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD50R520CP
Código: 5R520P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 66 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 13 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 31 pF
Resistencia entre drenaje y fuente RDS(on): 0.52 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IPD50R520CP
IPD50R520CP Datasheet (PDF)
ipd50r520cp.pdf
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TypeIPD50R520CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryPackageV"1@Tjmax 550 VV"1@Tjmax 550 VV*EL;HI
ipd50r520cp.pdf
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isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CPFEATURESStatic drain-source on-resistance:RDS(on)520mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r500ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R500CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R500CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r500ce.pdf
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isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CEFEATURESStatic drain-source on-resistance:RDS(on)500mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf
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IPD50R1K4CE, IPU50R1K4CEMOSFETDPAK IPAK500V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitiveapplications in Consumer an
ipd50r2k0ce ipu50r2k0ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R2K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R2K0CE, IPU50R2K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd50r380ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R380CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R380CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp
ipd50r650ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R650CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R650CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r950ce ipu50r950ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R950CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R950CE, IPU50R950CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd50r399cp.pdf
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IPD50R399CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryFeaturesV"1 @Tjmax 550 VV"1 @Tjmax 550 VV *EL;HI
ipd50r399cp rev2 1b.pdf
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IPD50R399CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryFeaturesV"1 @Tjmax 550 VV"1 @Tjmax 550 VV *EL;HI
ipd50r3k0ce ipu50r3k0ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R3K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R3K0CE, IPU50R3K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd50r800ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R800CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R800CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r280ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R280CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPD50R280CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered by
ipd50r1k4ce ipu50r1k4ce.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R1K4CEData SheetRev. 2.2FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R1K4CE, IPU50R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd50r380ce.pdf
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isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CEFEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r650ce.pdf
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isc N-Channel MOSFET Transistor IPD50R650CE,IIPD50R650CEFEATURESStatic drain-source on-resistance:RDS(on)650mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r2k0ce.pdf
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isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CEFEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G
ipd50r399cp.pdf
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isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CPFEATURESStatic drain-source on-resistance:RDS(on)399mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r1k4ce.pdf
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isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CEFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV
ipd50r950ce.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IPD50R950CE,IIPD50R950CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd50r3k0ce.pdf
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isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CEFEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G
ipd50r800ce.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CEFEATURESStatic drain-source on-resistance:RDS(on)800mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r280ce.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CEFEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
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