All MOSFET. IPD50R520CP Datasheet

 

IPD50R520CP MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD50R520CP

Marking Code: 5R520P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 66 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 7.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 31 pF

Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm

Package: TO252

IPD50R520CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD50R520CP Datasheet (PDF)

0.1. ipd50r520cp.pdf Size:702K _infineon

IPD50R520CP
IPD50R520CP

Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Product Summary Package V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI 7G=; Qg typ 1 nC Qg typ 1 nC V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8 0.2. ipd50r520cp.pdf Size:241K _inchange_semiconductor

IPD50R520CP
IPD50R520CP

isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤520mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS

 7.1. ipd50r500ce.pdf Size:1046K _infineon

IPD50R520CP
IPD50R520CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R500CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

7.2. ipd50r500ce.pdf Size:241K _inchange_semiconductor

IPD50R520CP
IPD50R520CP

isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤500mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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