IPD60R380C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPD60R380C6
   Código: 6R380C6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET IPD60R380C6

IPD60R380C6 Datasheet (PDF)

..1. Size:1213K infineon
ipd60r380c6.pdf

MOSFET+ =L9D - PA

..2. Size:1368K infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

..3. Size:242K inchange semiconductor
ipd60r380c6.pdf

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

5.1. Size:2739K infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

5.2. Size:998K infineon
ipd60r380e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.5FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

5.3. Size:2540K infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

5.4. Size:943K infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

5.5. Size:242K inchange semiconductor
ipd60r380p6.pdf

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

5.6. Size:210K inchange semiconductor
ipd60r380e6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD60R380E6FEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC si

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: