IPD60R380C6 Todos los transistores

 

IPD60R380C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD60R380C6

Código: 6R380C6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 10.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 3.5 V

Carga de compuerta (Qg): 32 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 46 pF

Resistencia drenaje-fuente RDS(on): 0.38 Ohm

Empaquetado / Estuche: TO252

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IPD60R380C6 Datasheet (PDF)

0.1. ipd60r380c6.pdf Size:1213K _infineon

IPD60R380C6
IPD60R380C6

MOSFET+ =L9D - PA

0.2. ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf Size:1368K _infineon

IPD60R380C6
IPD60R380C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 0.3. ipd60r380c6.pdf Size:242K _inchange_semiconductor

IPD60R380C6
IPD60R380C6

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

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