IPD60R380C6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD60R380C6
Marking Code: 6R380C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 10.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 46 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO252
IPD60R380C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD60R380C6 Datasheet (PDF)
0.1. ipd60r380c6.pdf 
Size:1213K _infineon
MOSFET
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isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.38Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
5.1. ipd60r380e6.pdf
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 600V
600V CoolMOS™ E6 Power Transistor
IPx60R380E6
Data Sheet
Rev. 2.5
Final
Power Management & Multimarket
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor
IPx60R380P6
Data Sheet
Rev. 2.1
Final
Power Management & Multimarket
600V CoolMOS™ P6 Power Transistor
IPP60R380P6, IPA60R380P6, IPD60R380P6
TO-220 TO-220 FP DPAK
1 Description
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CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed accor 5.3. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf
IPB60R380P6, IPP60R380P6, IPD60R380P6,
IPA60R380P6
MOSFET
D²PAK PG-TO 220 DPAK
600V CoolMOSª P6 Power Transistor
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CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
2
2
pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1
3
3
experience of the leading SJ MOSFET suppli 5.4. ipd60r380e6.pdf
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD60R380E6
·FEATURES
·With TO-252(DPAK) packaging
·With low gate drive requirements
·Very high commutation ruggedness
·Extremely high frequency operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·LCD&PDP TV
·PC si 5.5. ipd60r380p6.pdf
isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.38Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Sourc Size:242K _inchange_semiconductor
Size:998K _infineon
Size:2739K _infineon
Size:2540K _infineon
Size:210K _inchange_semiconductor
Size:242K _inchange_semiconductor
Datasheet: IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IRF2807 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 .
