All MOSFET. IPD60R380C6 Datasheet

 

IPD60R380C6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R380C6

Marking Code: 6R380C6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 10.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 46 pF

Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm

Package: TO252

IPD60R380C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R380C6 Datasheet (PDF)

0.1. ipd60r380c6.pdf Size:1213K _infineon

IPD60R380C6 IPD60R380C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ0.2. ipd60r380c6.pdf Size:242K _inchange_semiconductor

IPD60R380C6 IPD60R380C6

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

 5.1. ipd60r380e6.pdf Size:998K _infineon

IPD60R380C6 IPD60R380C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO eг г n i t г I I I D O‐ O‐ D 1 Descriptiסn t b tab C lMO i гe l ti n г te n l г i lt e p eг MO e i ne г in t t e peгj n ti n ) pгin iple n 2 pi neeгe b In ine n e n l ie C

5.2. ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf Size:2739K _infineon

IPD60R380C6 IPD60R380C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

 5.3. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf Size:2540K _infineon

IPD60R380C6 IPD60R380C6

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

5.4. ipd60r380e6.pdf Size:210K _inchange_semiconductor

IPD60R380C6 IPD60R380C6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC si

 5.5. ipd60r380p6.pdf Size:242K _inchange_semiconductor

IPD60R380C6 IPD60R380C6

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

Datasheet: IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IRF2807 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 .

 

 
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