IPD60R600C6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD60R600C6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 63 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IPD60R600C6 MOSFET
- Selecciónⓘ de transistores por parámetros
IPD60R600C6 datasheet
..1. Size:1224K infineon
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super
..3. Size:241K inchange semiconductor
ipd60r600c6.pdf
isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
4.1. Size:645K infineon
ipd60r600cp.pdf
IPD60R600CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO252
4.2. Size:241K inchange semiconductor
ipd60r600cp.pdf
isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage
5.1. Size:1143K infineon
ipd60r600e6 ipp60r600e6 ipa60r600e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri
5.2. Size:1339K infineon
ipd60r600e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)
5.3. Size:2849K infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET
5.4. Size:2688K infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor
5.5. Size:2519K infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf
IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli
5.6. Size:1186K infineon
ipd60r600p7.pdf
IPD60R600P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
5.7. Size:948K infineon
ipd60r600pfd7s.pdf
IPD60R600PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
5.8. Size:912K infineon
ipd60r600p7s.pdf
IPD60R600P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
5.9. Size:241K inchange semiconductor
ipd60r600e6.pdf
isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
5.10. Size:242K inchange semiconductor
ipd60r600p6.pdf
isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
5.11. Size:242K inchange semiconductor
ipd60r600p7.pdf
isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V
5.12. Size:242K inchange semiconductor
ipd60r600p7s.pdf
isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
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