All MOSFET. IPD60R600C6 Datasheet

 

IPD60R600C6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD60R600C6
   Marking Code: 6R600C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 63 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
   Maximum Drain Current |Id|: 7.3 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 20.5 nC
   Rise Time (tr): 9 nS
   Drain-Source Capacitance (Cd): 30 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
   Package: TO252

 IPD60R600C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R600C6 Datasheet (PDF)

 ..1. Size:1224K  infineon
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

IPD60R600C6
IPD60R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super

 ..2. Size:1051K  infineon
ipd60r600c6.pdf

IPD60R600C6
IPD60R600C6

MOSFET+ =L9D - PA

 ..3. Size:241K  inchange semiconductor
ipd60r600c6.pdf

IPD60R600C6
IPD60R600C6

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 4.1. Size:645K  infineon
ipd60r600cp.pdf

IPD60R600C6
IPD60R600C6

IPD60R600CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO252 :

 4.2. Size:241K  inchange semiconductor
ipd60r600cp.pdf

IPD60R600C6
IPD60R600C6

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CPFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 5.1. Size:1143K  infineon
ipd60r600e6 ipp60r600e6 ipa60r600e6.pdf

IPD60R600C6
IPD60R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R600E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6IPA60R600E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri

 5.2. Size:1339K  infineon
ipd60r600e6.pdf

IPD60R600C6
IPD60R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R600E6Data SheetRev. 2.0, 2010-04-12FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6IPD60R600E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 5.3. Size:2849K  infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf

IPD60R600C6
IPD60R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPB60R600P6, IPP60R600P6, IPA60R600P6,IPD60R600P6DPAK TO-220 TO-220 FP1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFET

 5.4. Size:2688K  infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf

IPD60R600C6
IPD60R600C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R600P6, IPA60R600P6, IPD60R600P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 5.5. Size:2519K  infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf

IPD60R600C6
IPD60R600C6

IPB60R600P6, IPP60R600P6, IPD60R600P6,IPA60R600P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 5.6. Size:1186K  infineon
ipd60r600p7.pdf

IPD60R600C6
IPD60R600C6

IPD60R600P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

 5.7. Size:948K  infineon
ipd60r600pfd7s.pdf

IPD60R600C6
IPD60R600C6

IPD60R600PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 5.8. Size:912K  infineon
ipd60r600p7s.pdf

IPD60R600C6
IPD60R600C6

IPD60R600P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 5.9. Size:241K  inchange semiconductor
ipd60r600e6.pdf

IPD60R600C6
IPD60R600C6

isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 5.10. Size:242K  inchange semiconductor
ipd60r600p6.pdf

IPD60R600C6
IPD60R600C6

isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 5.11. Size:242K  inchange semiconductor
ipd60r600p7.pdf

IPD60R600C6
IPD60R600C6

isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 5.12. Size:242K  inchange semiconductor
ipd60r600p7s.pdf

IPD60R600C6
IPD60R600C6

isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7SFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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