IPD60R950C6 Todos los transistores

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IPD60R950C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD60R950C6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Corriente continua de drenaje (Id): 4.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.95 Ohm

Empaquetado / Estuche: DPAK_TO252

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IPD60R950C6 Datasheet (PDF)

1.1. ipd60r950c6 2.1.pdf Size:1680K _infineon

IPD60R950C6
IPD60R950C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

4.1. ipd60r750e6 2.0 .pdf Size:2043K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R750E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

4.2. ipd60r1k4c6 2.0.pdf Size:1322K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@4.3. ipd60r450e6 2 0.pdf Size:2131K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R450E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

4.4. ipd60r380c6 2 0.pdf Size:1213K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ4.5. ipd60r600c6 2 0.pdf Size:1051K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=

4.6. ipd60r520c6 2.0.pdf Size:917K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA60R520C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

4.7. ipd60r385cp rev2 2[1].pdf Size:670K _infineon

IPD60R950C6
IPD60R950C6

IPD60R385CP C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,4.8. ipd60r600cp rev2[1].0.pdf Size:645K _infineon

IPD60R950C6
IPD60R950C6

IPD60R600CP C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG?TO252 ::7!"% #

4.9. ipd60r3k3c6 2.0.pdf Size:1347K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@4.10. ipd60r2k0c6 2.0.pdf Size:1300K _infineon

IPD60R950C6
IPD60R950C6

MOSFET + )>.;?6?@<> & ' ! 1 Descripti?n !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@4.11. ipd60r600e6 2 0.pdf Size:1339K _infineon

IPD60R950C6
IPD60R950C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

4.12. ipd60r520cp rev2.0.pdf Size:647K _infineon

IPD60R950C6
IPD60R950C6

IPD60R520CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1? X 0.520 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 24 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH PG?TO252 ::7!"% # 4= /0=4290/ 1:< U %6F9 GK>H8=>C< 0* -0 HDEDAD<>:G Type Pac

Otros transistores... IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IRFP4332 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 .

 


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