IPD60R950C6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD60R950C6
Marking Code: 6R950C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 37 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 4.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 21 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: TO252
IPD60R950C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD60R950C6 Datasheet (PDF)
0.1. ipd60r950c6.pdf Size:1680K _infineon
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
0.2. ipd60r950c6.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPD60R950C6,IIPD60R950C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
8.1. ipd60r180p7s.pdf Size:920K _infineon
IPD60R180P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF
8.2. ipa60r800ce ipd60r800ce.pdf Size:1618K _infineon
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R800CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R800CE, IPA60R800CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
8.3. ipd60r380e6.pdf Size:998K _infineon
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO eг г n i t г I I I D O‐ O‐ D 1 Descriptiסn t b tab C lMO i гe l ti n г te n l г i lt e p eг MO e i ne г in t t e peгj n ti n ) pгin iple n 2 pi neeгe b In ine n e n l ie C
8.4. ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf Size:2519K _infineon
IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli
8.5. ipd60r380c6.pdf Size:1213K _infineon
MOSFET
+ =L9D - PA<= 1=E A;GF MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
600V CoolMOS™ CE Power Transistor
IPx60R650CE
Data Sheet
Rev. 2.0
Final
Power Management & Multimarket
600V CoolMOS™ CE Power Transistor
IPD60R650CE, IPA60R650CE
DPAK TO-220 FP
1 Description
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunctio 8.7. ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor
IPx60R380P6
Data Sheet
Rev. 2.1
Final
Power Management & Multimarket
600V CoolMOS™ P6 Power Transistor
IPP60R380P6, IPA60R380P6, IPD60R380P6
TO-220 TO-220 FP DPAK
1 Description
tab tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed accor 8.8. ipd60r170cfd7.pdf IPD60R170CFD7
MOSFET
DPAK
600V CoolMOSª CFD7 Power Device
CoolMOS™ is a revolutionary technology for high voltage power
tab
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the
successor to the CoolMOS™ CFD2 series and is an optimized platform
tailored to target soft switching applications such as 8.9. ipd60r180c7.pdf IPD60R180C7
MOSFET
DPAK
600V CoolMOSª C7 Power Device
CoolMOS™ C7 is a revolutionary technology for high voltage power
tab
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies.
600V CoolMOS™ C7 series combines the experience of the leading SJ
MOSFET supplier with high class innovation.
2
1
The 600V C7 is the first technology eve 8.10. ipd60r520c6 2.0.pdf MOSFET
+ =L9D - PA<= 1=E A;GF 8.11. ipa60r460ce ipd60r460ce.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
600V CoolMOS™ CE Power Transistor
IPx60R460CE
Data Sheet
Rev. 2.0
Final
Power Management & Multimarket
600V CoolMOS™ CE Power Transistor
IPD60R460CE, IPA60R460CE
DPAK TO-220 FP
1 Description
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunctio 8.12. ipd60r400ce ips60r400ce ipa60r400ce.pdf IPD60R400CE, IPS60R400CE, IPA60R400CE
MOSFET
DPAK IPAK SL PG-TO 220 FP
600V CoolMOSª CE Power Transistor
tab
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
2
pioneered by Infineon Technologies. CoolMOS™ CE is a 1
3
price-performance optimized platform enabling to target cost sensitive
applica 8.13. ipd60r600p7s.pdf IPD60R600P7S
MOSFET
DPAK
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for
tab
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSF 8.14. ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor
IPx60R600P6
Data Sheet
Rev. 2.1
Final
Power Management & Multimarket
600V CoolMOS™ P6 Power Transistor
IPP60R600P6, IPA60R600P6, IPD60R600P6
TO-220 TO-220 FP DPAK
1 Description
tab tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed accor 8.15. ipd60r2k1ce ipu60r2k1ce.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
600V CoolMOS™ CE Power Transistor
IPx60R2K1CE
Data Sheet
Rev. 2.0
Final
Power Management & Multimarket
600V CoolMOS™ CE Power Transistor
IPD60R2K1CE, IPU60R2K1CE
DPAK IPAK
1 Description
tab
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunctio 8.16. ipd60r280p7s.pdf IPD60R280P7S
MOSFET
DPAK
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for
tab
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSF 8.17. ipd60r600cp.pdf IPD60R600CP
CססIMOS® #:A0< &<,9=4=>:<
#<:/?.> %?88, 8.18. ipd60r280p7.pdf IPD60R280P7
MOSFET
DPAK
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for
tab
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSFE 8.19. ipd60r520cp.pdf IPD60R520CP
CססIMOSTM #:A0< &<,9=4=>:<
#<:/?.> %?88, 8.20. ipd60r280cfd7.pdf IPD60R280CFD7
MOSFET
DPAK
600V CoolMOSª CFD7 Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power
tab
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the
successor to the CoolMOS™ CFD2 series and is an optimized platform
tailored to target soft switching applications suc 8.21. ipd60r450e6.pdf MOSFET
+ =L9D - PA<= 1=E A;GF 8.22. ipd60r1k4c6 2.0.pdf MOSFET
+ IPD60R360P7S
MOSFET
DPAK
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for
tab
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSF 8.24. ipd60r360p7.pdf IPD60R360P7
MOSFET
DPAK
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for
tab
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSFE 8.25. ipd60r600c6.pdf MOSFET
+ =L9D - PA<= 1=E A;GF 8.26. ipd60r385cp.pdf IPD60R385CP
CססIMOS® #:A0< &<,9=4=>:<
#<:/?.> %?88, MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Data Sheet
Rev. 2.0, 2010-04-12
Final
Industrial & Multimarket
600V CoolMOS™ E6 Power Transistor IPD60R600E6, IPP60R600E6
IPD60R600E6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) 8.28. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf IPB60R380P6, IPP60R380P6, IPD60R380P6,
IPA60R380P6
MOSFET
D²PAK PG-TO 220 DPAK
600V CoolMOSª P6 Power Transistor
tab tab
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
2
2
pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1
3
3
experience of the leading SJ MOSFET suppli 8.29. ipd60r600p7.pdf IPD60R600P7
MOSFET
DPAK
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for
tab
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSFE 8.30. ipa60r400ce ipd60r400ce.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
600V CoolMOS™ CE Power Transistor
IPx60R400CE
Data Sheet
Rev. 2.0
Final
Power Management & Multimarket
600V CoolMOS™ CE Power Transistor
IPD60R400CE, IPA60R400CE
DPAK TO-220 FP
1 Description
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunctio 8.31. ipd60r2k0c6 2.0.pdf MOSFET
+ MOSFET
+ MOSFET
+ =L9D - PA<= 1=E A;GF 8.34. ipd60r1k0ce ipu60r1k0ce.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
600V CoolMOS™ CE Power Transistor
IPx60R1K0CE
Data Sheet
Rev. 2.0
Final
Power Management & Multimarket
600V CoolMOS™ CE Power Transistor
IPD60R1K0CE, IPU60R1K0CE
DPAK IPAK
1 Description
tab
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunctio 8.35. ipd60r1k5ce ipu60r1k5ce.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CE
600V CoolMOS™ CE Power Transistor
IPx60R1K5CE
Data Sheet
Rev. 2.0
Final
Power Management & Multimarket
600V CoolMOS™ CE Power Transistor
IPD60R1K5CE, IPU60R1K5CE
DPAK IPAK
1 Description
tab
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunctio 8.36. ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE
MOSFET
DPAK IPAK IPAK SL
600V CoolMOSª CE Power Transistor
tab
tab
tab
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
2
pioneered by Infineon Technologies. CoolMOS™ CE is a 1
1
2
3
3
price-performance optimized platform enabling to target cost sensitive
a 8.37. ipd60r180p7s.pdf isc N-Channel MOSFET Transistor IPD60R180P7S,
IIPD60R180P7S
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.18Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
8.38. ipd60r380e6.pdf INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD60R380E6
·FEATURES
·With TO-252(DPAK) packaging
·With low gate drive requirements
·Very high commutation ruggedness
·Extremely high frequency operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·LCD&PDP TV
·PC si 8.39. ipd60r380c6.pdf isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.38Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
8.40. ipd60r170cfd7.pdf isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤170mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER 8.41. ipd60r600p6.pdf isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.42. ipd60r1k5ce.pdf isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤1.5Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.43. ipd60r180c7.pdf isc N-Channel MOSFET Transistor IPD60R180C7,IIPD60R180C7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.18Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Sou 8.44. ipd60r600p7s.pdf isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
8.45. ipd60r3k3c6.pdf isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤3.3Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.46. ipd60r280p7s.pdf isc N-Channel MOSFET Transistor IPD60R280P7S,
IIPD60R280P7S
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.28Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain 8.47. ipd60r600cp.pdf isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 8.48. ipd60r280p7.pdf isc N-Channel MOSFET Transistor IPD60R280P7,IIPD60R280P7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.28Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for a wide variety of applications and power ranges
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER 8.49. ipd60r520cp.pdf isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.52Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltag 8.50. ipd60r280cfd7.pdf isc N-Channel MOSFET Transistor IPD60R280CFD7,IIPD60R280CFD7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.28Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETE 8.51. ipd60r450e6.pdf isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.45Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
8.52. ipd60r360p7s.pdf isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.36Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Sou 8.53. ipd60r360p7.pdf isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.36Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Sourc 8.54. ipd60r3k4ce.pdf isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤3.4Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.55. ipd60r600c6.pdf isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.56. ipd60r385cp.pdf isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.385Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volta 8.57. ipd60r600e6.pdf isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.58. ipd60r460ce.pdf isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.46Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
8.59. ipd60r600p7.pdf isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.6Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.60. ipd60r1k4c6.pdf isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤1.4Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.61. ipd60r750e6.pdf isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.75Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltag 8.62. ipd60r800ce.pdf isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.8Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.63. ipd60r400ce.pdf isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.4Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.64. ipd60r380p6.pdf isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.38Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Sourc 8.65. ipd60r650ce.pdf isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.65Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
8.66. ipd60r2k1ce.pdf isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤2.1Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V 8.67. ipd60r2k0c6.pdf isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤2Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V G 8.68. ipd60r1k0ce.pdf isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤1Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 600 V
DSS
V G Size:1677K _infineon
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Size:2307K _infineon
Size:1375K _infineon
Size:242K _inchange_semiconductor
Size:210K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:241K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
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Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:241K _inchange_semiconductor
Size:243K _inchange_semiconductor
Size:241K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Size:242K _inchange_semiconductor
Datasheet: IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IRFP4332 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 .