IPD60R950C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R950C6 Datasheet (PDF)

0.1. ipd60r950c6.pdf Size:1680K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the supe

0.2. ipd60r950c6.pdf Size:241K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R950C6，IIPD60R950C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

 8.1. ipd60r180p7s.pdf Size:920K _infineon

IPD60R180P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

8.2. ipa60r800ce ipd60r800ce.pdf Size:1618K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R800CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R800CE, IPA60R800CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 8.3. ipd60r380e6.pdf Size:998K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket  C lMO eг г n i t г I I I D O‐ O‐ D 1 Descriptiסn t b tab C lMO i гe l ti n г te n l г i lt e p eг MO e i ne г in t t e peгj n ti n ) pгin iple n 2 pi neeгe b In ine n e n l ie C

8.4. ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf Size:2519K _infineon

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

 8.5. ipd60r380c6.pdf Size:1213K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ8.6. ipa60r650ce ipd60r650ce.pdf Size:1677K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R650CE, IPA60R650CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

8.7. ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf Size:2739K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

8.8. ipd60r170cfd7.pdf Size:1027K _infineon

IPD60R170CFD7 MOSFET DPAK 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such as

8.9. ipd60r180c7.pdf Size:1072K _infineon

IPD60R180C7 MOSFET DPAK 600V CoolMOSª C7 Power Device CoolMOS™ C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technology eve

8.10. ipd60r520c6 2.0.pdf Size:917K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA60R520C6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF

8.11. ipa60r460ce ipd60r460ce.pdf Size:1709K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R460CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R460CE, IPA60R460CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

8.12. ipd60r400ce ips60r400ce ipa60r400ce.pdf Size:1345K _infineon

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica

8.13. ipd60r600p7s.pdf Size:912K _infineon

IPD60R600P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

8.14. ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf Size:2688K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

8.15. ipd60r2k1ce ipu60r2k1ce.pdf Size:2232K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

8.16. ipd60r280p7s.pdf Size:1082K _infineon

IPD60R280P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

8.17. ipd60r600cp.pdf Size:645K _infineon

IPD60R600CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO252 :

8.18. ipd60r280p7.pdf Size:1081K _infineon

IPD60R280P7 MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFE

8.19. ipd60r520cp.pdf Size:647K _infineon

IPD60R520CP CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1? X 0.520 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 24 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH PG‐TO252 ::7!"% # 4= /0=4290/ 1:< U %6F9 GK>H8=>C< 0* -0 HDEDAD<>:G T

8.20. ipd60r280cfd7.pdf Size:1184K _infineon

IPD60R280CFD7 MOSFET DPAK 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications suc

8.21. ipd60r450e6.pdf Size:2131K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R450E6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF

8.22. ipd60r1k4c6 2.0.pdf Size:1322K _infineon

MOSFET + )>.;?6?@<> & ' ! 1 Descriptiסn !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@8.23. ipd60r360p7s.pdf Size:1100K _infineon

IPD60R360P7S MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSF

8.24. ipd60r360p7.pdf Size:905K _infineon

IPD60R360P7 MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFE

8.25. ipd60r600c6.pdf Size:1051K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=G

8.26. ipd60r385cp.pdf Size:670K _infineon

IPD60R385CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,8.27. ipd60r600e6.pdf Size:1339K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)

8.28. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf Size:2540K _infineon

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

8.29. ipd60r600p7.pdf Size:1186K _infineon

IPD60R600P7 MOSFET DPAK 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFE

8.30. ipa60r400ce ipd60r400ce.pdf Size:1706K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R400CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R400CE, IPA60R400CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

8.31. ipd60r2k0c6 2.0.pdf Size:1300K _infineon

MOSFET + )>.;?6?@<> & ' ! 1 Descriptiסn !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@8.32. ipd60r3k3c6 2.0.pdf Size:1347K _infineon

MOSFET + )>.;?6?@<> & ' ! 1 Descriptiסn !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@8.33. ipd60r750e6 2.0 .pdf Size:2043K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R750E6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF

8.34. ipd60r1k0ce ipu60r1k0ce.pdf Size:2314K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

8.35. ipd60r1k5ce ipu60r1k5ce.pdf Size:2307K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

8.36. ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf Size:1375K _infineon

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOSª CE Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a

8.37. ipd60r180p7s.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R180P7S， IIPD60R180P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V

8.38. ipd60r380e6.pdf Size:210K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC si

8.39. ipd60r380c6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

8.40. ipd60r170cfd7.pdf Size:241K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

8.41. ipd60r600p6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.42. ipd60r1k5ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.43. ipd60r180c7.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R180C7，IIPD60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

8.44. ipd60r600p7s.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

8.45. ipd60r3k3c6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.46. ipd60r280p7s.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R280P7S， IIPD60R280P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain

8.47. ipd60r600cp.pdf Size:241K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

8.48. ipd60r280p7.pdf Size:243K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R280P7，IIPD60R280P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for a wide variety of applications and power ranges ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

8.49. ipd60r520cp.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.52Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

8.50. ipd60r280cfd7.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R280CFD7，IIPD60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETE

8.51. ipd60r450e6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.45Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

8.52. ipd60r360p7s.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

8.53. ipd60r360p7.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

8.54. ipd60r3k4ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.55. ipd60r600c6.pdf Size:241K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.56. ipd60r385cp.pdf Size:243K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.385Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

8.57. ipd60r600e6.pdf Size:241K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.58. ipd60r460ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.46Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

8.59. ipd60r600p7.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.60. ipd60r1k4c6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.61. ipd60r750e6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

8.62. ipd60r800ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.63. ipd60r400ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.64. ipd60r380p6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

8.65. ipd60r650ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

8.66. ipd60r2k1ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

8.67. ipd60r2k0c6.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G

8.68. ipd60r1k0ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G