IPD90N04S4-05 Todos los transistores

 

IPD90N04S4-05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD90N04S4-05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: TO252
 

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IPD90N04S4-05 Datasheet (PDF)

 ..1. Size:154K  infineon
 ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf pdf_icon

IPD90N04S4-05

IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,

 2.1. Size:152K  infineon
 ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf pdf_icon

IPD90N04S4-05

IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,

 2.2. Size:154K  infineon
 ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf pdf_icon

IPD90N04S4-05

IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,

 2.3. Size:152K  infineon
 ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf pdf_icon

IPD90N04S4-05

IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,

MOSTRAR MÁS

Otros transistores... IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IRFP250 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , IPG20N04S4L-08 , IPG20N04S4L-11 .

History: WTM3401 | MTH6N60 | SWI7N70K | SI2302S | T2N7002AK | HU70N08 | 40N06

 

 
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