IPD90N04S4-05 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPD90N04S4-05
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 86 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 560 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD90N04S4-05
IPD90N04S4-05 Datasheet (PDF)
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf

IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf

IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf

IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf

IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,
Другие MOSFET... IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IRFP250 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , IPG20N04S4L-08 , IPG20N04S4L-11 .
History: IPP200N15N3G | SDP10N60 | UPA2350T1P | SM3113NSU | HSBA3031 | AO4705 | 2SK1105-R
History: IPP200N15N3G | SDP10N60 | UPA2350T1P | SM3113NSU | HSBA3031 | AO4705 | 2SK1105-R



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