IPG20N06S2L-50 Todos los transistores

 

IPG20N06S2L-50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPG20N06S2L-50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TDSON84
     - Selección de transistores por parámetros

 

IPG20N06S2L-50 Datasheet (PDF)

 ..1. Size:162K  infineon
 ipg20n06s2l-50 ipg20n06s2l-50 ds 10.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-50OptiMOS Power-TransistorProduct SummaryV 55 VDS4)50mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-50 PG-TDSON-8-4 2N0

 0.1. Size:196K  infineon
 ipg20n06s2l-50a.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-50AOptiMOS Power-TransistorProduct SummaryVDS 55 VRDS(on),max4) 50mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type Pac

 2.1. Size:162K  infineon
 ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35 PG-TDSON-8-4 2N0

 2.2. Size:201K  infineon
 ipg20n06s2l-65a.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-65AOptiMOS Power-TransistorProduct SummaryVDS55 VRDS(on),max3)65mID20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

MOSTRAR MÁS

Otros transistores... IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , IPG20N04S4L-08 , IPG20N04S4L-11 , IPG20N06S2L-35 , IRF830 , IPG20N06S2L-65 , IPG20N06S4-15 , IPG20N06S4L-11 , IPG20N06S4L-14 , IPG20N06S4L-26 , IPI100N04S3-03 , IPI100N08S2-07 , IPI100N10S3-05 .

History: MMBFJ112 | WFY3N02 | APT904R2AN | IRFM460 | SVF7N60CF | IRF7309IPBF | NCEAP40T14G

 

 
Back to Top

 


 
.