IPG20N06S2L-50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPG20N06S2L-50  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TDSON84

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IPG20N06S2L-50 datasheet

 ..1. Size:162K  infineon
 ipg20n06s2l-50 ipg20n06s2l-50 ds 10.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-50 OptiMOS Power-Transistor Product Summary V 55 V DS 4) 50 m R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-50 PG-TDSON-8-4 2N0

 0.1. Size:196K  infineon
 ipg20n06s2l-50a.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-50A OptiMOS Power-Transistor Product Summary VDS 55 V RDS(on),max4) 50 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Pac

 2.1. Size:162K  infineon
 ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-35 OptiMOS Power-Transistor Product Summary V 55 V DS 4) 35 m R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-35 PG-TDSON-8-4 2N0

 2.2. Size:201K  infineon
 ipg20n06s2l-65a.pdf pdf_icon

IPG20N06S2L-50

IPG20N06S2L-65A OptiMOS Power-Transistor Product Summary VDS 55 V RDS(on),max3) 65 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type

MOSTRAR MÁS

Otros transistores... IPD90R1K2C3, IPG20N04S4-08, IPG20N04S4-09, IPG20N04S4-12, IPG20N04S4L-07, IPG20N04S4L-08, IPG20N04S4L-11, IPG20N06S2L-35, 10N65, IPG20N06S2L-65, IPG20N06S4-15, IPG20N06S4L-11, IPG20N06S4L-14, IPG20N06S4L-26, IPI100N04S3-03, IPI100N08S2-07, IPI100N10S3-05