IPI70N10S3L-12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI70N10S3L-12
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 125 W
Tensión drenaje-fuente (Vds): 100 V
Corriente continua de drenaje (Id): 70 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.0121 Ohm
Empaquetado / Estuche: PGTO262
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IPI70N10S3L-12 Datasheet (PDF)
1.1. ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf 
Size:187K _infineon
IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pac
1.2. ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf Size:124K _infineon
IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS? Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m? Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP70N10SL-16 PG-TO220-3-1
1.3. ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf Size:186K _infineon
IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS-T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m? DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Pack
Otros transistores... IPI45N06S4-09 , IPI45N06S4L-08 , IPI45P03P4L-11 , IPI47N10S-33 , IPI47N10SL-26 , IPI50N10S3L-16 , IPI70N04S3-07 , IPI70N10S3-12 , IRFP260M , IPI70N10SL-16 , IPI80N03S4L-03 , IPI80N03S4L-04 , IPI80N04S2-04 , IPI80N04S2-H4 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FQD6N40TM | FQD6N40TF | FQD6N40CTM | FQD6N40CTF | FQD6N25TM | FQD6N25TF | FQD630TM | FQD630TF | FQD5P20TM | FQD5P20TF | FQD5P10TM | FQD5P10TF | FQD5N60CTM | FQD5N60CTF | FQD5N50TF |