All MOSFET. IPI70N10S3L-12 Datasheet

 

IPI70N10S3L-12 Datasheet and Replacement


   Type Designator: IPI70N10S3L-12
   Marking Code: 3N10L12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0121 Ohm
   Package: TO262
 

 IPI70N10S3L-12 substitution

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IPI70N10S3L-12 Datasheet (PDF)

 ..1. Size:160K  infineon
 ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf pdf_icon

IPI70N10S3L-12

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mWDS(on),maxI 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche

 ..2. Size:187K  infineon
 ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf pdf_icon

IPI70N10S3L-12

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalan

 4.1. Size:186K  infineon
 ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf pdf_icon

IPI70N10S3L-12

IPB70N10S3-12IPI70N10S3-12, IPP70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 11.3mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanc

 5.1. Size:124K  infineon
 ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPI70N10S3L-12

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

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Datasheet: IPI45N06S4-09 , IPI45N06S4L-08 , IPI45P03P4L-11 , IPI47N10S-33 , IPI47N10SL-26 , IPI50N10S3L-16 , IPI70N04S3-07 , IPI70N10S3-12 , STP65NF06 , IPI70N10SL-16 , IPI80N03S4L-03 , IPI80N03S4L-04 , IPI80N04S2-04 , IPI80N04S2-H4 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 .

History: NTP055N65S3H | JMSL0302AU | HRP80N08K | SIS407ADN | NCE30PD08S | RU30L15H

Keywords - IPI70N10S3L-12 MOSFET datasheet

 IPI70N10S3L-12 cross reference
 IPI70N10S3L-12 equivalent finder
 IPI70N10S3L-12 lookup
 IPI70N10S3L-12 substitution
 IPI70N10S3L-12 replacement

 

 
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