IPI80N03S4L-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI80N03S4L-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO262

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IPI80N03S4L-04 datasheet

 ..1. Size:192K  infineon
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdf pdf_icon

IPI80N03S4L-04

IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 1.1. Size:187K  infineon
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdf pdf_icon

IPI80N03S4L-04

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 1.2. Size:192K  infineon
ipi80n03s4l-03 ipp80n03s4l-03.pdf pdf_icon

IPI80N03S4L-04

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 7.1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N03S4L-04

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

Otros transistores... IPI47N10S-33, IPI47N10SL-26, IPI50N10S3L-16, IPI70N04S3-07, IPI70N10S3-12, IPI70N10S3L-12, IPI70N10SL-16, IPI80N03S4L-03, IRF9640, IPI80N04S2-04, IPI80N04S2-H4, IPI80N04S3-03, IPI80N04S3-04, IPI80N04S3-06, IPI80N04S3-H4, IPI80N04S4-04, IPI80N04S4L-04