IPI80N03S4L-04 Todos los transistores

 

IPI80N03S4L-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI80N03S4L-04
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: TO262
 

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IPI80N03S4L-04 Datasheet (PDF)

 ..1. Size:192K  infineon
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdf pdf_icon

IPI80N03S4L-04

IPB80N03S4L-03IPI80N03S4L-04, IPP80N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 3.3mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

 1.1. Size:187K  infineon
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdf pdf_icon

IPI80N03S4L-04

IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

 1.2. Size:192K  infineon
ipi80n03s4l-03 ipp80n03s4l-03.pdf pdf_icon

IPI80N03S4L-04

IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

 7.1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N03S4L-04

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

Otros transistores... IPI47N10S-33 , IPI47N10SL-26 , IPI50N10S3L-16 , IPI70N04S3-07 , IPI70N10S3-12 , IPI70N10S3L-12 , IPI70N10SL-16 , IPI80N03S4L-03 , AON7403 , IPI80N04S2-04 , IPI80N04S2-H4 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 , IPI80N04S3-H4 , IPI80N04S4-04 , IPI80N04S4L-04 .

History: IPP070N06NG | IRFR4105 | SJMN1K4R90ZD

 

 
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