IPI80N03S4L-04. Аналоги и основные параметры

Наименование производителя: IPI80N03S4L-04

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 94 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 1000 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI80N03S4L-04

- подборⓘ MOSFET транзистора по параметрам

 

IPI80N03S4L-04 даташит

 ..1. Size:192K  infineon
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdfpdf_icon

IPI80N03S4L-04

IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 1.1. Size:187K  infineon
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdfpdf_icon

IPI80N03S4L-04

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 1.2. Size:192K  infineon
ipi80n03s4l-03 ipp80n03s4l-03.pdfpdf_icon

IPI80N03S4L-04

IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 7.1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPI80N03S4L-04

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

Другие IGBT... IPI47N10S-33, IPI47N10SL-26, IPI50N10S3L-16, IPI70N04S3-07, IPI70N10S3-12, IPI70N10S3L-12, IPI70N10SL-16, IPI80N03S4L-03, IRF9640, IPI80N04S2-04, IPI80N04S2-H4, IPI80N04S3-03, IPI80N04S3-04, IPI80N04S3-06, IPI80N04S3-H4, IPI80N04S4-04, IPI80N04S4L-04