APT8030B2VR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8030B2VR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 645 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO247

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APT8030B2VR datasheet

 ..1. Size:58K  apt
 apt8030b2vr.pdf pdf_icon

APT8030B2VR

APT8030B2VR 800V 27A 0.300 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 4.1. Size:60K  apt
 apt8030b2vfr.pdf pdf_icon

APT8030B2VR

APT8030B2VFR 800V 27A 0.300 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

 7.1. Size:62K  apt
 apt8030lvfr.pdf pdf_icon

APT8030B2VR

APT8030LVFR 800V 27A 0.300 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 7.2. Size:60K  apt
 apt8030lvr.pdf pdf_icon

APT8030B2VR

APT8030LVR 800V 27A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

MOSTRAR MÁS

Otros transistores... APT60M75PVR, APT60M90JN, APT8015JVFR, APT8015JVR, APT8018JN, APT8028JVR, APT802R4KN, APT8030B2VFR, IRFZ44N, APT8030JN, APT8030JVFR, APT8030JVR, APT8030LVFR, APT8030LVR, APT8056BVFR, APT8056BVR, APT8058HVR