All MOSFET. APT8030B2VR Datasheet

 

APT8030B2VR Datasheet and Replacement


   Type Designator: APT8030B2VR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 645 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO247
 

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APT8030B2VR Datasheet (PDF)

 ..1. Size:58K  apt
 apt8030b2vr.pdf pdf_icon

APT8030B2VR

APT8030B2VR800V 27A 0.300POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

 4.1. Size:60K  apt
 apt8030b2vfr.pdf pdf_icon

APT8030B2VR

APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

 7.1. Size:62K  apt
 apt8030lvfr.pdf pdf_icon

APT8030B2VR

APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 7.2. Size:60K  apt
 apt8030lvr.pdf pdf_icon

APT8030B2VR

APT8030LVR800V 27A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

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History: APT8018JN | QS8K13 | MTE130N20KFP | FQH140N10 | FRM450R | 2N4118A | MTE05N08E3

Keywords - APT8030B2VR MOSFET datasheet

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