IPI80N06S4L-07 Todos los transistores

 

IPI80N06S4L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI80N06S4L-07
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm
   Paquete / Cubierta: TO262
 

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IPI80N06S4L-07 Datasheet (PDF)

 ..1. Size:170K  infineon
 ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf pdf_icon

IPI80N06S4L-07

IPB80N06S4L-07IPI80N06S4L-07, IPP80N06S4L-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 6.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 1.1. Size:174K  infineon
 ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf pdf_icon

IPI80N06S4L-07

IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 1.2. Size:170K  infineon
 ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf pdf_icon

IPI80N06S4L-07

IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 4.1. Size:175K  infineon
 ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf pdf_icon

IPI80N06S4L-07

IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

MOSTRAR MÁS

Otros transistores... IPI80N04S4L-04 , IPI80N06S2-07 , IPI80N06S2-08 , IPI80N06S2L-05 , IPI80N06S2L-11 , IPI80N06S4-05 , IPI80N06S4-07 , IPI80N06S4L-05 , IRF840 , IPI80N08S2-07 , IPI80P03P4L-04 , IPI80P03P4L-07 , IPI90N04S4-02 , IPI90N06S4-04 , IPI90N06S4L-04 , IPI023NE7N3G , IPI024N06N3G .

History: AO4906 | SUM75N15-18P | IXFH170N10P | IXKH20N60C5 | IXFH16N50P | 2SK1794 | CS20N60F

 

 
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