IPI80N08S2-07 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI80N08S2-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 1260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm

Encapsulados: TO262

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IPI80N08S2-07 datasheet

 ..1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N08S2-07

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 ..2. Size:160K  infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N08S2-07

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 5.1. Size:228K  infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf pdf_icon

IPI80N08S2-07

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

 7.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPI80N08S2-07

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

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